Issued Patents 2011
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8049295 | Coupling well structure for improving HVMOS performance | Hsueh-Liang Chou, Chen-Bau Wu, Weng-Chu Chu, Fu-Jier Fan | 2011-11-01 |
| 7989890 | Lateral power MOSFET with high breakdown voltage and low on-resistance | Puo-Yu Chiang, Ruey-Hsin Liu, Shun-Liang Hsu, Chyi-Chyuan Huang, Fu-Hsin Chen +1 more | 2011-08-02 |
| 7977743 | Alternating-doping profile for source/drain of a FET | Chen-Liang Chu, Chun-Ting Liao, Fei-Yuh Chen | 2011-07-12 |
| 7960786 | Breakdown voltages of ultra-high voltage devices by forming tunnels | Eric Huang, Fu-Hsin Chen, Chyi-Chyuan Huang, Chung-Yeh Wu | 2011-06-14 |
| 7928508 | Disconnected DPW structures for improving on-state performance of MOS devices | Chih-Wen Yao, Puo-Yu Chiang, Tsai Chun Lin | 2011-04-19 |
| 7888216 | Method of fabricating a high performance power MOS | Yu-Wen Chen, Fu-Hsin Chen, Yt Tsai | 2011-02-15 |
| 7888734 | High-voltage MOS devices having gates extending into recesses of substrates | Chen-Liang Chu, Chun-Ting Liao, Fei-Yuh Chen | 2011-02-15 |