Issued Patents 2011
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7863695 | Complementary MISFET semiconductor device having an atomic density ratio aluminum/lanthanum (Al/La) in the gate insulating layer of PMIS is larger than that of the NMIS | Masato Koyama, Yoshinori Tsuchiya, Hirotaka Nishino, Reika Ichihara, Akira Takashima | 2011-01-04 |