Issued Patents 2011
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8044458 | Semiconductor device including a vertical gate zone, and method for producing the same | Anton Mauder | 2011-10-25 |
| 8035195 | Semiconductor element | Franz-Josef Niedernostheide, Manfred Pfaffenlehner | 2011-10-11 |
| 8034700 | Method of fabricating a diode | Franz-Josef Niedernostheide, Reiner Barthelmess | 2011-10-11 |
| 8018064 | Arrangement including a semiconductor device and a connecting element | Uwe Kellner-Werdehausen, Reiner Barthelmess, Heinrich Gerstenkoeper, Ralf Joerke | 2011-09-13 |
| 8008712 | Metallization and its use in, in particular, an IGBT or a diode | Frank Hille | 2011-08-30 |
| 8003502 | Semiconductor device and fabrication method | Anton Mauder, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schaeffer +1 more | 2011-08-23 |
| 7989888 | Semiconductor device with a field stop zone and process of producing the same | Frank Pfirsch, Stephan Voss, Franz-Josef Niedernostheide | 2011-08-02 |
| 7982253 | Semiconductor device with a dynamic gate-drain capacitance | Anton Mauder, Carolin Tolksdorf, Winfried Kaindl, Armin Willmeroth | 2011-07-19 |
| 7982289 | Wafer and a method for manufacturing a wafer | Hans-Joerg Timme, Helmut Strack | 2011-07-19 |
| 7932583 | Reduced free-charge carrier lifetime device | Holger Ruething, Frank Hille, Frank Pfirsch | 2011-04-26 |
| 7923772 | Semiconductor device with a semiconductor body and method for producing it | Anton Mauder | 2011-04-12 |
| 7915675 | IGBT having one or more stacked zones formed within a second layer of the IGBT | Hans Peter Felsl | 2011-03-29 |
| 7884389 | Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method | Franz-Josef Niedernostheide, Uwe Kellner-Werdehausen, Reiner Barthelmess | 2011-02-08 |
| 7879699 | Wafer and a method for manufacturing a wafer | Hans-Joerg Timme, Helmut Strack | 2011-02-01 |