FH

Fu-Yuan Hsieh

FC Force Mos Technology Co.: 12 patents #1 of 3Top 35%
📍 New Taipei, TW: #10 of 996 inventorsTop 2%
Overall (2011): #1,964 of 364,097Top 1%
13
Patents 2011

Issued Patents 2011

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
8072000 Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area 2011-12-06
8067800 Super-junction trench MOSFET with resurf step oxide and the method to make the same 2011-11-29
8058685 Trench MOSFET structures using three masks process 2011-11-15
8034686 Method of manufacturing a trench MOSFET having trench contacts integrated with trench Schottky rectifiers having planar contacts 2011-10-11
8030702 Trenched MOSFET with guard ring and channel stop 2011-10-04
8004009 Trench MOSFETS with ESD Zener diode 2011-08-23
8004036 MOSFET-Schottky rectifier-diode integrated circuits with trench contact structures for device shrinkage and performance improvement 2011-08-23
7989887 Trench MOSFET with trenched floating gates as termination 2011-08-02
7956410 Trench MOSFET with trench gates underneath contact areas of ESD diode for prevention of gate and source shortage 2011-06-07
7936014 Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation 2011-05-03
7897997 Trench IGBT with trench gates underneath contact areas of protection diodes 2011-03-01
7898026 LDMOS with double LDD and trenched drain 2011-03-01
7872306 Structure of trench MOSFET and method for manufacturing the same 2011-01-18