Issued Patents 2004
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835997 | Thyristor-based device with trench dielectric material | Scott Robins | 2004-12-28 |
| 6828202 | Semiconductor region self-aligned with ion implant shadowing | — | 2004-12-07 |
| 6828176 | Thyristor having a first emitter with relatively lightly doped portion to the base | Farid Nemati, Scott Robins | 2004-12-07 |
| 6818482 | Method for trench isolation for thyristor-based device | Scott Robins | 2004-11-16 |
| 6815734 | Varied trench depth for thyristor isolation | Scott Robins | 2004-11-09 |
| 6790713 | Method for making an inlayed thyristor-based device | — | 2004-09-14 |
| 6781888 | Reference cells for TCCT based memory cells | Tapan Samaddar | 2004-08-24 |
| 6777271 | Thyristor-based device including trench isolation | Scott Robins, Farid Nemati, Hyun-Jin Cho | 2004-08-17 |
| 6767770 | Method of forming self-aligned thin capacitively-coupled thyristor structure | Scott Robins, Farid Nemati | 2004-07-27 |
| 6756612 | Carrier coupler for thyristor-based semiconductor device | Farid Nemati, Badredin Fatemizadeh, Scott Robins | 2004-06-29 |
| 6727528 | Thyristor-based device including trench dielectric isolation for thyristor-body regions | Scott Robins, Farid Nemati, Hyun-Jin Cho | 2004-04-27 |
| 6703646 | Thyristor with lightly-doped emitter | Farid Nemati, Scott Robins | 2004-03-09 |
| 6690038 | Thyristor-based device over substrate surface | Hyun-Jin Cho, Scott Robins, Farid Nemati | 2004-02-10 |
| 6690039 | Thyristor-based device that inhibits undesirable conductive channel formation | Farid Nemati, Scott Robins | 2004-02-10 |
| 6686612 | Thyristor-based device adapted to inhibit parasitic current | Scott Robins | 2004-02-03 |
| 6683330 | Recessed thyristor control port | Scott Robins | 2004-01-27 |