Issued Patents 2004
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6812056 | Technique for fabricating MEMS devices having diaphragms of “floating” regions of single crystal material | — | 2004-11-02 |
| 6812526 | Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface | — | 2004-11-02 |
| 6794251 | Method of making a power semiconductor device | — | 2004-09-21 |
| 6790745 | Fabrication of dielectrically isolated regions of silicon in a substrate | — | 2004-09-14 |
| 6777745 | Symmetric trench MOSFET device and method of making same | Fwu-Iuan Hshieh, Koon Chong So | 2004-08-17 |
| 6750104 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source | Fwu-Iuan Hshieh | 2004-06-15 |
| 6750523 | Photodiode stacks for photovoltaic relays and the method of manufacturing the same | — | 2004-06-15 |
| 6734495 | Two terminal programmable MOS-gated current source | — | 2004-05-11 |
| 6730963 | Minimum sized cellular MOS-gated device geometry | — | 2004-05-04 |
| 6724044 | MOSFET device having geometry that permits frequent body contact | — | 2004-04-20 |
| 6724039 | Semiconductor device having a Schottky diode | — | 2004-04-20 |
| 6713351 | Double diffused field effect transistor having reduced on-resistance | — | 2004-03-30 |
| 6710400 | Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion | — | 2004-03-23 |
| 6710414 | Surface geometry for a MOS-gated device that allows the manufacture of dice having different sizes | — | 2004-03-23 |
| 6689662 | Method of forming a high voltage power MOSFET having low on-resistance | — | 2004-02-10 |
| 6686244 | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step | — | 2004-02-03 |