Issued Patents 2004
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6831867 | Semiconductor device having mechanism capable of high-speed operation | — | 2004-12-14 |
| 6816418 | MIS semiconductor device having improved gate insulating film reliability | — | 2004-11-09 |
| 6813199 | Semiconductor memory device with improved saving rate for defective chips | — | 2004-11-02 |
| 6795335 | Thin film magnetic memory device for conducting data write operation by application of a magnetic field | — | 2004-09-21 |
| 6791876 | Thin-film magnetic memory device suppressing parasitic capacitance applied to data line or the like | Hiroaki Tanizaki, Takaharu Tsuji | 2004-09-14 |
| 6791875 | Thin film magnetic memory device realizing both high-speed data reading operation and stable operation | — | 2004-09-14 |
| 6787853 | Semiconductor device using an SOI substrate | Katsuhiro Suma, Takahiro Tsuruda | 2004-09-07 |
| 6788569 | Thin film magnetic memory device reducing a charging time of a data line in a data read operation | Hiroaki Tanizaki, Tsukasa Ooishi | 2004-09-07 |
| 6788568 | Thin film magnetic memory device capable of conducting stable data read and write operations | — | 2004-09-07 |
| 6781874 | Thin film magnetic memory device including memory cells having a magnetic tunnel junction | — | 2004-08-24 |
| 6778430 | Magnetic thin-film memory device for quick and stable reading data | — | 2004-08-17 |
| 6777986 | Data output circuit with reduced output noise | Masakazu Hirose | 2004-08-17 |
| 6768662 | Semiconductor memory device including an SOI substrate | Katsuhiro Suma, Takahiro Tsuruda | 2004-07-27 |
| 6762953 | Nonvolatile memory device with sense amplifier securing reading margin | Hiroaki Tanizaki, Tsukasa Ooishi | 2004-07-13 |
| 6760251 | Memory device reading data according to difference in electrical resistance between selected memory cell and reference cell | — | 2004-07-06 |
| 6757191 | Thin film magnetic memory device sharing an access element by a plurality of memory cells | Tsukasa Ooishi, Masatoshi Ishikawa | 2004-06-29 |
| 6754099 | Thin film magnetic memory device including memory cells having a magnetic tunnel junction | — | 2004-06-22 |
| 6738285 | Thin film magnetic memory device with high-accuracy data read structure having a reduced number of circuit elements | Hiroaki Tanizaki, Tsukasa Ooishi | 2004-05-18 |
| 6690241 | Ring oscillator having variable capacitance circuits for frequency adjustment | Tsukasa Ooishi, Tomoya Kawagoe, Mikio Asakura | 2004-02-10 |
| 6683807 | Thin film magnetic memory device for programming required information with an element similar to a memory cell and information programming method | — | 2004-01-27 |
| 6680862 | Memory device having wide margin of data reading operation, for storing data by change in electric resistance value | — | 2004-01-20 |
| 6678195 | Semiconductor memory device with improved flexible redundancy scheme | — | 2004-01-13 |