EF

Eugene A. Fitzgerald

AS Amberwave Systems: 5 patents #1 of 6Top 20%
MIT: 5 patents #4 of 343Top 2%
📍 Windham, NH: #1 of 36 inventorsTop 3%
🗺 New Hampshire: #4 of 979 inventorsTop 1%
Overall (2004): #1,686 of 270,089Top 1%
10
Patents 2004

Issued Patents 2004

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
6831292 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Matthew T. Currie, Anthony J. Lochtefeld, Richard Hammond 2004-12-14
6830976 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits 2004-12-14
6805744 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates Andrew Y. Kim 2004-10-19
6750130 Heterointegration of materials using deposition and bonding 2004-06-15
6737670 Semiconductor substrate structure Zhi-Yuan Cheng, Dimitri Antoniadis, Judy L. Hoyt 2004-05-18
6730551 Formation of planar strained layers Minjoo L. Lee, Christopher Leitz 2004-05-04
6713326 Process for producing semiconductor article using graded epitaxial growth Zhi-Yuan Cheng, Dimitri Antoniadis, Judy L. Hoyt 2004-03-30
6703144 Heterointegration of materials using deposition and bonding 2004-03-09
6689211 Etch stop layer system Kenneth Chai-en Wu, Jeffrey T. Borenstein, Gianna Taraschi 2004-02-10
6677192 Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits 2004-01-13