Issued Patents 2004
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6806154 | Method for forming a salicided MOSFET structure with tunable oxynitride spacer | — | 2004-10-19 |
| 6791155 | Stress-relieved shallow trench isolation (STI) structure and method for forming the same | Brian Schorr, Gary Foley, Shih-Ked Lee | 2004-09-14 |
| 6740549 | Gate structures having sidewall spacers using selective deposition and method of forming the same | Chih-Hsiang Chen, S. Kevin Lee | 2004-05-25 |