Issued Patents 2004
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6813295 | Asymmetric InGaAsN vertical cavity surface emitting lasers | Tetsuya Takeuchi, Ying-Lan Chang, David P. Bour, Michael Leary | 2004-11-02 |
| 6764926 | Method for obtaining high quality InGaAsN semiconductor devices | Tetsuya Takeuchi, Ying-Lan Chang, David P. Bour, Michael Leary, Andy Luan | 2004-07-20 |
| 6765238 | Material systems for semiconductor tunnel-junction structures | Yin-Lan Chang, Ashish Tandon, Michael Leary | 2004-07-20 |
| 6756325 | Method for producing a long wavelength indium gallium arsenide nitride(InGaAsN) active region | David P. Bour, Tetsuya Takeuchi, Ashish Tandon, Ying-Lan Chang, Scott W. Corzine | 2004-06-29 |
| 6730944 | InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP | Ashish Tandon, Ying-Ian Chang, Scott W. Corzine, David P. Bour | 2004-05-04 |
| 6711195 | Long-wavelength photonic device with GaAsSb quantum-well layer | Ying-Lan Chang, Scott W. Corzine, Russell Dupuis, Min Soo Noh, Jae-Hyun Ryou +1 more | 2004-03-23 |