SW

Sung Man WHANG

Samsung: 1 patents #693 of 2,362Top 30%
📍 Suwon-si, NY: #3 of 9 inventorsTop 35%
Overall (2003): #111,861 of 273,478Top 45%
1
Patents 2003

Issued Patents 2003

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
6541328 Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regions Hyung-Moo Park, Dong-cho Maeng, Hyae-Ryoung Lee, Ho-Woo Park 2003-04-01