Issued Patents 2003
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6645822 | Method for manufacturing a semiconductor circuit system | — | 2003-11-11 |
| 6642565 | Miniaturized capacitor with solid-state dielectric, in particular for integrated semiconductor memories, E.G. DRAMS, and method for fabricating such a capacitor | Emmerich Bertagnolli, Josef Willer | 2003-11-04 |
| 6638812 | Method for producing a memory cell for a semiconductor memory | Franz Hofmann | 2003-10-28 |
| 6608340 | Substrate assembly having a depression suitable for an integrated circuit configuration and method for its fabrication | Franz Hofmann, Josef Willer | 2003-08-19 |
| 6576948 | Integrated circuit configuration and method for manufacturing it | Franz Hofmann, Wolfgang Krautschneider, Josef Willer | 2003-06-10 |
| 6566187 | DRAM cell system and method for producing same | Josef Willer, Franz Hoffmann | 2003-05-20 |
| 6566182 | DRAM memory cell for DRAM memory device and method for manufacturing it | Franz Hofmann | 2003-05-20 |
| 6566193 | Method for producing a cell of a semiconductor memory | Franz Hofmann | 2003-05-20 |
| 6538273 | Ferroelectric transistor and method for fabricating it | Josef Willer, Georg Braun, Thomas Haneder | 2003-03-25 |
| 6534820 | Integrated dynamic memory cell having a small area of extent, and a method for its production | Franz Hofmann, Wolfgang Krautschneider | 2003-03-18 |
| 6521935 | Mos transistor and dram cell configuration | Wolfgang Krautschneider, Josef Willer | 2003-02-18 |
| 6518613 | Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the same | Josef Willer, Hans Reisinger, Reinhard Stengl | 2003-02-11 |
| 6512259 | Capacitor with high-&egr; dielectric or ferroelectric material based on the fin stack principle | Gerrit Lange | 2003-01-28 |
| 6504200 | DRAM cell configuration and fabrication method | Bernhard Sell, Josef Willer | 2003-01-07 |