Issued Patents 2003
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6668002 | Semiconductor laser device including ARROW structure formed without P-As interdiffusion and Al oxidation | — | 2003-12-23 |
| 6661821 | Semiconductor laser element having great bandgap difference between active layer and optical waveguide layers, and including arrow structure formed without P-As interdiffusion | — | 2003-12-09 |
| 6643306 | Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited | — | 2003-11-04 |
| 6625190 | Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layers | Toshiro Hayakawa, Mitsugu Wada | 2003-09-23 |
| 6621845 | Semiconductor laser device which includes AlGaAs optical waveguide layer being formed over internal stripe groove and having controlled refractive index | — | 2003-09-16 |
| 6600770 | High-power semiconductor laser device having current confinement structure and index-guided structure and stably oscillating in single mode | Mitsugu Wada, Kenji Matsumoto | 2003-07-29 |
| 6580738 | High-power semiconductor laser device in which near-edge portions of active layer are removed | — | 2003-06-17 |
| 6560261 | Semiconductor laser device having InGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers, and InGaP optical waveguide layers | Tsuyoshi Ohgoh | 2003-05-06 |
| 6553046 | High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap | Fujio Akinaga, Mitsugu Wada | 2003-04-22 |
| 6546033 | InGaAsP semiconductor laser device in which near-edge portions are filled with non-absorbent layer, and lower optical waveguide layer includes InGaP intermediate layer | — | 2003-04-08 |
| 6535536 | Semiconductor laser element | Kenji Matsumoto, Mitsugu Wada | 2003-03-18 |
| 6516016 | High-power semiconductor laser device having current confinement structure and index-guided structure, and oscillating in transverse mode | Mitsugu Wada | 2003-02-04 |