Issued Patents 2002
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6448190 | Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid | Shinichiro Hayashi, Carlos A. Paz de Araujo | 2002-09-10 |
| 6441414 | Ferroelectric field effect transistor, memory utilizing same, and method of operating same | Myoungho Lim, Vikram Joshi, Jeffrey W. Bacon, Joseph D. Cuchiaro, Carlos A. Paz de Araujo | 2002-08-27 |
| 6437380 | Ferroelectric device with bismuth tantalate capping layer and method of making same | Myoungho Lim, Vikram Joshi, Narayan Solayappan, Carlos A. Paz de Araujo | 2002-08-20 |
| 6413883 | Method of liquid deposition by selection of liquid viscosity and other precursor properties | Shinichiro Hayashi, Carlos A. Paz de Araujo | 2002-07-02 |
| 6404003 | Thin film capacitors on silicon germanium substrate | Carlos A. Paz de Araujo, Koji Arita, Masamichi Azuma | 2002-06-11 |
| 6383555 | Misted precursor deposition apparatus and method with improved mist and mist flow | Shinichiro Hayashi, Carlos A. Paz de Araujo | 2002-05-07 |
| 6376691 | Metal organic precursors for transparent metal oxide thin films and method of making same | Jolanta Bozena Celinska, Carlos A. Paz de Araujo, Joseph D. Cuchiaro, Jeffrey W. Bacon | 2002-04-23 |
| 6373743 | Ferroelectric memory and method of operating same | Zheng Chen, Myoungho Lim, Vikram Joshi, Carlos A. Paz de Araujo | 2002-04-16 |
| 6370056 | Ferroelectric memory and method of operating same | Zheng Chen, Vikram Joshi, Myoungho Lim, Carlos A. Paz de Araujo | 2002-04-09 |
| 6365927 | Ferroelectric integrated circuit having hydrogen barrier layer | Joseph D. Cuchiaro, Carlos A. Paz de Araujo | 2002-04-02 |
| 6339238 | Ferroelectric field effect transistor, memory utilizing same, and method of operating same | Myoungho Lim, Vikram Joshi, Joseph D. Cuchiaro, Carlos A. Paz de Araujo | 2002-01-15 |