KN

Kazutoshi Nakamura

KT Kabushiki Kaisha Toshiba: 2 patents #283 of 2,065Top 15%
📍 Kuwana, JP: #2 of 7 inventorsTop 30%
Overall (2002): #56,267 of 266,432Top 25%
2
Patents 2002

Issued Patents 2002

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
6380566 Semiconductor device having FET structure with high breakdown voltage Tomoko Matsudai, Yusuke Kawaguchi, Hirofumi Nagano, Akio Nakagawa 2002-04-30
6353252 High breakdown voltage semiconductor device having trenched film connected to electrodes Norio Yasuhara, Yusuke Kawaguchi 2002-03-05