Issued Patents 1989
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4890147 | Through-field implant isolated devices and method | Clarence W. Teng | 1989-12-26 |
| 4890141 | CMOS device with both p+ and n+ gates | Thomas E. Tang, Che-Chia Wei, Richard A. Chapman | 1989-12-26 |
| 4851360 | NMOS source/drain doping with both P and As | David B. Scott | 1989-07-25 |
| 4845047 | Threshold adjustment method for an IGFET | Thomas C. Holloway, Richard A. Chapman | 1989-07-04 |
| 4821085 | VLSI local interconnect structure | Thomas C. Holloway | 1989-04-11 |
| 4814854 | Integrated circuit device and process with tin-gate transistor | Howard L. Tigelaar, Thomas C. Holloway, Robert Groover, III | 1989-03-21 |
| 4811078 | Integrated circuit device and process with tin capacitors | Howard L. Tigelaar, Thomas C. Holloway | 1989-03-07 |
| 4811076 | Device and process with doubled capacitors | Howard L. Tigelaar, James L. Paterson, Thomas C. Holloway | 1989-03-07 |
| 4804636 | Process for making integrated circuits having titanium nitride triple interconnect | Robert Groover, III, Thomas C. Holloway | 1989-02-14 |