Issued Patents 1989
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4885617 | Metal-oxide semiconductor (MOS) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit | C. A. Mazure-Espejo | 1989-12-05 |
| 4884117 | Circuit containing integrated bipolar and complementary MOS transistors on a common substrate | Josef Winnerl | 1989-11-28 |
| 4874717 | Semiconductor circuit containing integrated bipolar and MOS transistors on a chip and method of producing same | Ulrich Schwabe | 1989-10-17 |
| 4855245 | Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate | Josef Winnerl | 1989-08-08 |
| 4803179 | Methods for making neighboring wells for VLS1 CMOS components | Carlos-Alberto Mazure-Espejo | 1989-02-07 |