Issued Patents 1989
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4868537 | Doped SiO.sub.2 resistor and method of forming same | — | 1989-09-19 |
| 4851366 | Method for providing dielectrically isolated circuit | — | 1989-07-25 |
| 4845051 | Buried gate JFET | Adrian I. Cogan | 1989-07-04 |
| 4835586 | Dual-gate high density fet | Adrian I. Cogan | 1989-05-30 |
| 4827324 | Implantation of ions into an insulating layer to increase planar pn junction breakdown voltage | — | 1989-05-02 |
| 4824795 | Method for obtaining regions of dielectrically isolated single crystal silicon | — | 1989-04-25 |
| 4816882 | Power MOS transistor with equipotential ring | Adrian I. Cogan | 1989-03-28 |
| 4798810 | Method for manufacturing a power MOS transistor | Adrian I. Cogan | 1989-01-17 |
| 4799100 | Method and apparatus for increasing breakdown of a planar junction | Adrian I. Cogan | 1989-01-17 |