| 4876669 |
MOS static type RAM having a variable load |
Sho Yamamoto, Makoto Saeki, Yasuo Yoshitomi, Hideaki Nakamura, Masaaki Kubotera |
1989-10-24 |
| 4853894 |
Static random-access memory having multilevel conductive layer |
Toshiaki Yamanaka, Norio Suzuki, Yoshio Sakai, Yoshifumi Kawamoto, Koichiro Ishibashi +2 more |
1989-08-01 |
| 4849801 |
Semiconductor memory device having increased capacitance for the storing nodes of the memory cells |
Shigeru Honjyo, Yoshio Sakai, Toshiaki Yamanaka, Katsuhiro Shimohigashi, Toshiaki Masuhara |
1989-07-18 |
| 4841486 |
Semiconductor memory device and sense amplifier |
Toshiaki Masuhara, Koichiro Ishibashi, Shoji Hanamura, Shigeru Honjyo, Nobuyuki Moriwaki |
1989-06-20 |
| 4805147 |
Stacked static random access memory cell having capacitor |
Toshiaki Yamanaka, Yoshio Sakai, Tetsuya Hayashida, Katsuhiro Shimohigashi, Toshiaki Masuhara |
1989-02-14 |
| 4797717 |
Semiconductor memory device |
Koichiro Ishibashi, Toshiaki Masuhara, Yoshio Sakai, Toshiaki Yamanaka, Naotaka Hashimoto +4 more |
1989-01-10 |