Issued Patents 1989
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4829359 | CMOS device having reduced spacing between N and P channel | Kenneth K. O, Lawrence G. Pearce | 1989-05-09 |
| 4814285 | Method for forming planarized interconnect level using selective deposition and ion implantation | Richard L. Lichtel, Jr. | 1989-03-21 |